DYNAMIC CHARACTERISTIC TEST SYSTEM

  • Lined up for various uses from production to development and evaluation.
  • Aims for developing products corresponded to universal environment
    with high voltage, high current, and high speed.
  • Evaluation system with measurement temperature from -60℃ to 300℃ is developed.
  • Rich experiences for new materials such as SiC and GaN.

SWITCHING TIME TESTER [MOS-FET, IGBT]

SWR330A
SWR330A

SWR330A has been designed to measure resistive load switching time for MOS-FETs and IGBT. It judges the go/no-go by taking in a digital oscilloscope waveform by corresponding with software.

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SWITCHING TIME & QG TEST SYSTEM [MOS-FET, IGBT]

SWQR550
SWQR550

SWQR550 has both function of resistive load switching time and gate capacity (QG) measurement. However, it can not measure resistive load switching time and gate capacity consecutively because each measurement characteristic is respected.

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SEMICONDUCTOR DYNAMIC CHARACTERISTIC EVALUATION SYSTEM [TRANSISTOR, MOS-FET, IGBT, DIODE]

SWRL1510ZZ
SWRL1510ZZ

SWRL1510ZZ has 1ms forcing function at 1500V, 1000A, which is enough power for power device dynamic characteristics tester. Measurement part is designed for testing in both low and high temperature. It can connect to external chamber to evaluate device by temperature characteristics.

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tester

PRODUCT INFORMATION


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