DYNAMIC CHARACTERISTIC TEST SYSTEM

  • Lined up for various uses from production to development and evaluation.
  • Aims for developing products corresponded to universal environment
    with high voltage, high current, and high speed.
  • Evaluation system with measurement temperature from -60℃ to 300℃ is developed.
  • Rich experiences for new materials such as SiC and GaN.

SWITCHING TIME TESTER [MOS-FET, IGBT]

SWR330A
SWR330A

SWR330A has been designed to measure resistive load switching time for MOS-FETs and IGBT. It judges the go/no-go by taking in a digital oscilloscope waveform by corresponding with software.

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SWITCHING TIME&QG TEST SYSTEMb[MOS-FET, IGBT]

SWQR550
SWQR550

SWQR550 has both function of resistive load switching time and gate capacity (QG) measurement. However, it can not measure resistive load switching time and gate capacity consecutively because each measurement characteristic is respected.

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SWITCHING TIME TEST SYSTEM [MOS-FET, IGBT]

SWS1240ZZF
SWS1240ZZF

SWS1240ZZF has been designed to test switching characteristics and energy tolerance at short circuit that are by IGBT inductive load. This model can test 6 devices at maximum.

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SWITCHING TIME TEST SYSTEM [MOS-FET, IGBT, DIODE]

SWS1530ZZ
SWS1530ZZ

SWS1530ZZ has been designed to test short circuit tolerance and switching characteristics of IGBT, MOS-FET and DIODE. It is possible to test automatically with temperature environment of -40℃~175℃, and from low breakdown voltage to high breakdown voltage area.

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di/dt TESTER [MOS-FET, DIODE]

GST650Z
GST650Z

GST650Z has been designed to seek and judge di/dt characteristic with software by using reverse recovery waveform of MOS-FETs and diodes or break waveform with digital oscilloscope. It has OPEN/SHORT test and driver check functions to improve reliability.

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INDUCTIVE LOAD TESTER (Included leakage current test) [MOS-FET]

LVNI20ZFCA
LVNI20ZFCA"

LVNI20ZFCA is inductive load tester for MOS-FET, which system is for a measurement with a wafer condition. This system is equipped with high speed interception circuits at a chip destruction, and has IGSS and IDSS measurement circuits for leakage measurement before and after L load measurement.

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INDUCTIVE LOAD TESTER [TRANSISTOR, MOS-FET]

LVTG20Z
LVTG20Z"

LVTG20Z is designed to guarantee the energy limitation to switching at the inductive load of TRANSISTOR and MOS FETs by turn off waveform voltage and current area. This tester can measure the close tolerance of each points by the clamp voltage.

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PRODUCT INFORMATION


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